a) Band structure at the metal-semiconductor interface before the... | Download Scientific Diagram
Semiconductor Junctions, Solid-Solid Junctions | SpringerLink
Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy: AIP Advances: Vol 3, No 11
a Schematic of the QW band structure, showing the well width d, the... | Download Scientific Diagram
Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy: AIP Advances: Vol 3, No 11
Calculated bandgap and barrier height of Mg1−xZnxO as a function of Zn... | Download Scientific Diagram
Back contact barrier height (ΦBp) as a function of band gap and... | Download Scientific Diagram
Schottky barrier formation and band bending revealed by first- principles calculations | Scientific Reports
Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor | Scientific Reports
Barrier height and energy gap as a function of temperature as extracted... | Download Scientific Diagram
1D Schottky barrier
Potential Barrier Height - an overview | ScienceDirect Topics
Metal-induced gap states - Wikiwand
Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure | Nanoscale Research Letters | Full Text
Energy band alignment with barrier heights at the as-grown (1.8 eV),... | Download Scientific Diagram
3.1.6.2 Schottky Contact
Schottky barrier height difference ( b ) and band offsets (E c,v ) as a... | Download Scientific Diagram
Band gap and Schottky barrier heights of multiferroic BiFeO3: Applied Physics Letters: Vol 90, No 13
Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure | Nanoscale Research Letters | Full Text
GaN-Based Schottky Diode | IntechOpen
Professor Robert B. Laughlin, Department of Physics, Stanford University
Schottky contact of an artificial polymer semiconductor composed of poly(dimethylsiloxane) and multiwall carbon nanotubes - Journal of Materials Chemistry A (RSC Publishing)
